تراشه اپتوکوپلر TLP250 پکیج اورجینال

Specification

OP.CP TRN.10 TO 35V 11mA 2500Vrms

Transistor Inverter

Inverter For Air Conditionor

IGBT Gate Drive

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8−lead DIP package.

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

•  Input threshold current: IF=5mA(max.)

•  Supply current (ICC): 11mA(max.)

•  Supply voltage (VCC): 10−35V

•  Output current (IO): ±1.5A (max.)

•  Switching time (tpLH/tpHL): 1.5µs(max.)

•  Isolation voltage: 2500Vrms(min.)

•  UL recognized: UL1577, file No.E67349

•  Option (D4) type